- The incomplete ionization of substitutional dopants in Silicon Carbide
- Scaburri, Raffaele <1974>
Subject
- ING-IND/22 Scienza e tecnologia dei materiali
Description
- This thesis analyzes theoretically and computationally the phenomenon of partial ionization of the substitutional dopants in Silicon Carbide at thermal equilibrium. It is based on the solution of the charge neutrality equation and takes into account the following phenomena: several energy levels in the bandgap; Fermi-Dirac statistics for free carriers; screening effects on the dopant ionization energies; the formation of impurity bands. A self-consistent model and a corresponding simulation software have been realized. A preliminary comparison of our calculations with existing experimental results is carried out.
Date
- 2011-05-25
Type
- Doctoral Thesis
- PeerReviewed
Format
- application/pdf
Identifier
urn:nbn:it:unibo-2774
Scaburri, Raffaele (2011) The incomplete ionization of substitutional dopants in Silicon Carbide, [Dissertation thesis], Alma Mater Studiorum Università di Bologna. Dottorato di ricerca in Ingegneria dei materiali