• Phosphorus ion implantation in SiC: influence of the annealing conditions on dopant activation and defects
  • Canino, Mariaconcetta <1980>

Subject

  • FIS/03 Fisica della materia

Date

  • 2007-05-17

Type

  • Doctoral Thesis
  • PeerReviewed

Format

  • application/pdf

Identifier

urn:nbn:it:unibo-317

Canino, Mariaconcetta (2007) Phosphorus ion implantation in SiC: influence of the annealing conditions on dopant activation and defects, [Dissertation thesis], Alma Mater Studiorum Università di Bologna. Dottorato di ricerca in Fisica , 19 Ciclo. DOI 10.6092/unibo/amsdottorato/329.

Relations